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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Reactive-ion etching ： ウィキペディア英語版 Reactive-ion etching Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. == Equipment == A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber. The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon. Gas pressure is typically maintained in a range between a few millitorr and a few hundred millitorr by adjusting gas flow rates and/or adjusting an exhaust orifice. Other types of RIE systems exist, including inductively coupled plasma (ICP) RIE. In this type of system, the plasma is generated with an RF powered magnetic field. Very high plasma densities can be achieved, though etch profiles tend to be more isotropic. A combination of parallel plate and inductively coupled plasma RIE is possible. In this system, the ICP is employed as a high density source of ions which increases the etch rate, whereas a separate RF bias is applied to the substrate (silicon wafer) to create directional electric fields near the substrate to achieve more anisotropic etch profiles. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Reactive-ion etching」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.